Local structure of In x Ga 1 − x As semiconductor alloys by high-energy synchrotron x-ray diffraction

摘要: Nearest- and higher-neighbor distances as well bond length distributions (static thermal) of the ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ $(0l~xl~1)$ semiconductor alloys have been obtained from high-real-space resolution atomic pair distribution functions. Using this structural information, we modeled local displacements in alloys. From a supercell model based on Kirkwood potential, three-dimensional As (In,Ga) ensemble average probability distributions. These clearly show that atom are highly directional can be represented combination $〈100〉$ $〈111〉$ displacements. Examination indicates standard deviation $(\ensuremath{\sigma})$ static disorder sublattice is around 60% value much more isotropic than those sublattice. The single-crystal diffuse scattering calculated shows most strongly correlated along $〈110〉$ directions.