Thermal expansion of bulk nanostructured n -type SiGe nanocomposite from 300 to 1400 K

作者: Lydia Pavlova , Yury Shtern , Elena Kirilenko

DOI: 10.1007/S10853-016-0387-5

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摘要: The use of the nanostructured nanocomposites aims to improve peak figure merit (ZT) values thermoelectric alloys. In addition ZT, coefficients thermal linear expansion (CTLE) these alloys are equally important for estimating stresses imposed by cycling inherent waste heat recovery operations. this study, we report calculated “technical alpha”, i.e., experimental mean CTLE bulk n-type Si80Ge20 alloy doped with phosphorus at 298–1220 K. elemental composition spark plasma sintered (SPS)-specimen after in infrared furnace is characterized means AES spectroscopy combination ion sputtering. Small amounts contaminants, such as Fe and O, large losses P detected. Elongations have been measured using ULVAC DL-1500-RH high-speed dilatometer various rates heating cooling. Anomalous behavior Si80Ge20(P2.2) composite observed high temperatures. Previously, same anomaly was detected temperature dependence elongation pure silicon. There some discrepancies between our measurements n-SiGe composites those reported literature. Moreover, SiGe solid solution also studied verify additive scheme explore deviations from it predicting higher on basis properties components. These calculations undoped match results dilatometric X-ray experiments conducted during period 1964–1987 based other theoretical approaches.

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