Piezoelectric, dielectric, and interfacial properties of aluminum nitride films
作者： D. Liufu , K. C. Kao
DOI: 10.1116/1.581352
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摘要: The piezoelectric and related properties of highly c-axis oriented AlN films fabricated by dc planar magnetron sputtering have been measured. Experimental results show that can be at low electric fields with energetic electrons driven out a magnetic field to reduce any possible damaging effects resulting from electron bombardments on the growing films, strong microwave effect. A bulk acoustic wave delay line formed depositing an film as transducer z-LiNbO3 substrate propagation medium exhibits good performances. major advantage such is its weight volume made much smaller than conventional lines. also chemical dielectric properties, suitable for use insulation or passivation layers.
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S.Rossi Salmagne, W. Mönch, Growth of AlN films on Ga- and As-rich GaAs(001) surfaces Surface Science. pp. 937- 941 ,(1995) , 10.1016/0039-6028(95)00288-X
H. Yamashita, K. Fukui, S. Misawa, S. Yoshida, Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region Journal of Applied Physics. ,vol. 50, pp. 896- 898 ,(1979) , 10.1063/1.326007
J. K. Liu, K. M. Lakin, K. L. Wang, Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire Journal of Applied Physics. ,vol. 46, pp. 3703- 3706 ,(1975) , 10.1063/1.322169
M. A. Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon, Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 43, pp. 492- 494 ,(1983) , 10.1063/1.94363
S Muhl, J A Zapien, J M Mendez, E Andrade, Aluminium nitride films prepared by reactive magnetron sputtering Journal of Physics D. ,vol. 30, pp. 2147- 2155 ,(1997) , 10.1088/0022-3727/30/15/005
G. A. Rozgonyi, W. J. Polito, Epitaxial Thin Films of ZnO on CdS and Sapphire Journal of Vacuum Science and Technology. ,vol. 6, pp. 115- 119 ,(1969) , 10.1116/1.1492639
G. A. Jeffrey, G. S. Parry, R. L. Mozzi, Study of the Wurtzite‐Type Binary Compounds. I. Structures of Aluminum Nitride and Beryllium Oxide The Journal of Chemical Physics. ,vol. 25, pp. 1024- 1031 ,(1956) , 10.1063/1.1743091
C. R. Aita, Basal orientation aluminum nitride grown at low temperature by rf diode sputtering Journal of Applied Physics. ,vol. 53, pp. 1807- 1808 ,(1982) , 10.1063/1.330682
D. Liu, K. C. Kao, High‐field hole injection, conduction, and breakdown in polyethylene films fabricated by plasma polymerization Journal of Applied Physics. ,vol. 69, pp. 2489- 2496 ,(1991) , 10.1063/1.348966
Wen‐Tai Lin, Ling‐Cheng Meng, Guo‐Ju Chen, Hok‐Shin Liu, Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation Applied Physics Letters. ,vol. 66, pp. 2066- 2068 ,(1995) , 10.1063/1.113904