作者: Koji Yokoyama , Yoshinori Sato , Kazutaka Hirano , Hiromichi Ohta , Kenichi Motomiya
DOI: 10.1016/J.CARBON.2015.07.090
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摘要: Abstract Nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs) were synthesized by reacting fluorinated SWCNTs with ammonia gas at reaction temperatures of 300–600 °C. In the N-doped 400 °C (N400°C-doped SWCNTs), nitrogen atoms introduced into nanotube framework a concentration 3.04 at.%, concentrations pyridinic-, pyrrolic-, graphitic-, and pyridine-N-oxide-type species 1.22, 1.36, 0.34, 0.08 at.%, respectively, their percentages respect to total 40.1, 44.7, 11.2, 2.6%, respectively. The volume resistivity films N400°C-doped was 2.3 ± 1.1 Ω · cm, indicating that they can be classified as semiconductors. Finally, it found thermopower negative room temperature in air, exhibited n-type conduction.