SiGe gate oxide prepared at low‐temperatures in an electron cyclotron resonance plasma
作者： P. W. Li , E. S. Yang
DOI: 10.1063/1.110790
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摘要: SiGe gate oxide prepared at low temperatures (25–400 °C) by electron cyclotron resonance (ECR) plasma is reported. 100–200 A oxides were grown on Si0.8Ge0.2 substrates ECR oxidation under different bias conditions. The electrical properties of the are strong functions processing conditions and post‐processing treatments. High frequency (1 MHz) quasistatic capacitance‐voltage oxides’ measurements indicate that device quality can be produced this process; specifically, fixed charge interface state densities comparable to those metal‐oxide‐semiconductor capacitors silicon with an aluminum gate.
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