作者: T. Dimopoulos , C. Tiusan , V. da Costa , K. Ounadjela , H. A. M. van den Berg
DOI: 10.1063/1.1328764
关键词:
摘要: We have fabricated magnetic tunnel junctions that use Co/Ru/Co and Co/Ru/Co50Fe50 artificial ferrimagnet (AFi) systems as hard electrodes AlOx barrier. The thermal behavior of the two AFis, incorporated in junctions, presents dramatic differences, most remarkable being much greater stability Co/Ru/CoFe system. This stems from improvement interfaces CoFe alloy forms with its adjacent Ru layers. After successive annealing steps up to 400 °C, incorporating system still present a significant magnetoresistance signal nearly 20%, importantly, an almost intact rigidity system, very promising for spin-electronic devices.