Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
作者： Kevin Lucas , Ajay Jain
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摘要: The present invention provides an anti-reflective Ta3 N5 coating which can be used in a dual damascene structure and for I line or G lithographies. In addition, the may also as etch stop barrier layer. A is formed by depositing first dielectric layer (16). tantalum nitride (18) deposited on top of second (20) opening (34) etched into layers patterning portion (26) (32) using photolithography operations. Dielectric serves ARC during these operations to reduce amount reflectance from conductive region (14) distortion photoresist pattern. use particularly suitable lithography.
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