APPARATUS FOR GROWING SINGLE CRYSTAL AND METHOD FOR CONTROLLING SAME

摘要: PURPOSE:To decrease the temperature difference between boundary layer of solid and liquid circumference a crucible in production single crystal Czochralski process, by imposing magnetic field specific method. CONSTITUTION:The 7 is pulled up from solid-liquid interfacial 6 molten raw material 1 1. In above apparatus, magnet apparatus composed pair circular coils 15a 15b arranged manner to cancel generated each other placed be movable vertically driving 25. The distance adjustable with adjusting 24. set generate thermal convection flow 8 at inside B10 (having weak field) 2, make stationary state outside strong field). lowered according lowering level caused growth imposed decreased narrowing gap coils.