A “waiting” carbon nitride radical anion: a charge storage material and key intermediate in direct C–H thiolation of methylarenes using elemental sulfur as the “S”-source
作者： Aleksandr Savateev , Bogdan Kurpil , Artem Mishchenko , Guigang Zhang , Markus Antonietti
DOI: 10.1039/C8SC00745D
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摘要: Potassium poly(heptazine imide), a carbon nitride based semiconductor with high structural order and valence band potential of +2.2 V vs. NHE, in the presence hole scavengers under visible light irradiation gives corresponding polymeric radical anion, which specific density unpaired electrons reaches 112 μmol g-1. The obtained anion is stable anaerobic conditions for several hours. It was characterized using UV-vis absorption, time resolved steady state photoluminescence spectra. electronic structure confirmed by DFT cluster modelling. unique properties potassium imide) storing charges were employed photocatalysis. A series substituted dibenzyldisulfanes synthesized 41-67% yield from methylarenes via cleavage methyl C-H bond metal-free conditions.
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