作者: Ch. Taudt , T. Baselt , B. Nelsen , H. Assmann , A. Greiner
DOI: 10.1117/12.2252375
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摘要: Manufacturing of precise structures in MEMS, semiconductors, optics and other fields requires high standards manufacturing quality control. Appropriate surface topography measurement technologies should therefore deliver nm accuracy the axial dimension under typical industrial conditions. This work shows characterization a dispersion-encoded low-coherence interferometer for purpose fast robust measurements. The key component is an element with known dispersion. dispersive delivers controlled phase variation relation to height which can be detected spectral domain. A laboratory setup equipped broadband light source (200 - 1100 nm) was established. Experiments have been carried out on silicon-based standard steps 100 different thermal conditions such as 293.15 K 303.15 K. Additionally, stability studied over periods 5 hours (with constant temperature) 15 linear increasing temperature). analyzed data showed that 97:99 +/- 4:9nm 101:43 3:3nm possible. time-resolved measurements revealed developed highly stable against small fluctuations behaviour load. Calibration mathmatical corrections obtained.