One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures
作者： Y. Satoh , H. Abe , Y. Matsukawa , T. Matsunaga , S. Kano
DOI: 10.1080/14786435.2015.1040100
关键词:
摘要: For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D frequency decreases to less than one-tenth of that 300 K iron-based bcc alloys. In this study, we examined mechanisms temperatures using situ observation SUS316L and its model alloys with high-voltage microscopy. First, for effects annealing short-term SIA on their subsequent migration. annealed SUS316L, was suppressed then recovered prolonged high-purity alloy Fe-18Cr-13Ni, or had no effect. Addition carbon oxygen after annealing. Manganese silicon did not suppress but irradiation. The suppress...
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