作者: T. L. Hylton , M. A. Parker , J. K. Howard
DOI: 10.1063/1.107772
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摘要: For the first time, epitaxial barium‐ferrite thin films, predominantly of magnetoplumbite structure, with an easy axis magnetization in‐plane have been prepared on single‐crystal sapphire substrates by reactive sputtering and post‐deposition annealing. Lattice images high resolution transmission electron microscopy reveal probable origin magnetic anisotropy to be epitaxy between Ba‐ferrite sapphire, causing c‐axis lie nearly in‐plane. Coercivities more than 9 kOe achieved in easy‐axis direction Al substituted films reduced approximately 25% value for unsubstituted films.