Selective atomic layer deposition with post-dose treatment
作者： Frank L. Pasquale , Ishtak Karim , Adrien Lavoie , Purushottam Kumar , Jun Qian
DOI:
关键词:
摘要: Methods and apparatuses for depositing films in high aspect ratio features trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose operations performed after adsorbing precursors onto the substrate to remove adsorbed at tops of prior converting silicon-containing film. treatments include exposure non-oxidizing gas, plasma, ultraviolet radiation.
lens.org 参考文章(428)
Yeong-kwan Kim, Jae-soon Lim, Sang-in Lee, Sung-Je Choi, Young-wook Park, Method of forming thin film using atomic layer deposition method ,(2000)
孝子 木村, Christian Dussarat, クリスチャン・デュサラ, Kazutaka Yanagida, 和孝 柳田, 岳志 星, Takashi Hoshi, Takeshi Saito, Takako Kimura, 豪 斎藤, Deposition method of silicon nitride film, and manufacturing method of semiconductor device using the deposition method ,(2004)
Miyaba Yuju, Ochi Tomowa, Arakawa Shinichi, Solid state camera device and its manufacture method ,(2013)
Bloking Jason Thomas, Hua Zhong Qiang, Purnawan Rionard, Wang Anchuan, Yieh Ellie Y, Lee Young S, MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP ,(2008)
Hiroyuki Matsuura, Formation of silicon nitride film by using atomic layer deposition method ,(2006)
Mishina Takeshi, Sakaguchi Sumuto, Takami Yoshio, SILICON NITRIDE THIN FILM DEPOSITING METHOD, AND SILICON NITRIDE THIN FILM DEPOSITING DEVICE ,(2011)
Kentaro Kadonaga, Pao-Hwa Chou, Kazuhide Hasebe, 一秀 長谷部, 保華 周, Koutai Umezawa, 好太 梅澤, 健太郎 門永, 皓翔 張, Hao-Hsiang Chang, Film forming method, film forming device, and memory medium ,(2006)
Park Seung Gyun, Lee Sang In, METHOD FOR DEPOSITING THIN FILM CONTAINING METAL ,(2009)
Bradford J Lyndaker, John C Valcore, Harmeet Singh, Sub-pulses during states ,(2016)