作者: Sanggil Bae , Jae Ho Joung , Ki Young Lee
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摘要: Capacitor and contact structures are provided, as well methods for forming the capacitor structures. The include, instance, providing a layer of conductive material above structure lower electrode capacitor; etching to define hard mask an upper capacitor, being disposed at least partially structure; first second structure, extending through opening in conductively contacting one or capacitor.