Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films
作者： Hsuan-Tai Hsu , Ming-Hung Chiang , Chen-Hao Huang , Wen-Tai Lin , Yaw-Shyan Fu
DOI: 10.1016/J.TSF.2014.10.065
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摘要: Abstract SnS, Ge- and Sb-doped SnS films with single orthorhombic phase were fabricated via solvothermal routes subsequent spin-coating, respectively. The substitution solubilities of Ge Sb in are about 6 5 at.%, bandgaps can be tuned the ranges 1.25–1.35 1.30–1.39 eV, possible mechanisms for tunable discussed. For subjected to annealing at 200–350 °C N2, 200 °C-annealed remain unchanged, while those 300 °C- 350 °C-annealed decrease temperature because evaporation
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