作者: Z. Q. Liu , Z. Huang , W. M. Lü , K. Gopinadhan , X. Wang
DOI: 10.1063/1.3688772
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摘要: The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat annealing. Then the STO film achieved on LAO substrate, which is expected be similar n-type interface two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as mirror structure for typical 2DEG heterostructure further clarify origin 2DEG. This newly developed determined highly insulating. Additionally, this study demonstrates an approach achieve growth based substrates.