Drain-Bias Transient Instability of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

摘要: High-voltage amorphous indium–gallium–zinc oxide thin-film transistors can be monolithically integrated into the system-on-chip platform as input–output bridges. However, a transient instability showing substantial ON-current degradation under high drain bias is discovered. This drain-bias depends on stress time of less than 10 s and both gate voltages. It attributed to charge trapping in local oxygen vacancies with shallow energy levels migration ions near drain. We found that are induced by metal contacts. An elevated-metal structure suppresses separating contact region farther away from channel compared conventional top-contact structure.