Observation of intermediate template directed SiC nanowire growth in Si-C-N systems.
作者： Min Xia , Shize Yang , Hongyan Guo , Wei Hao , Qingzhi Yan
DOI: 10.1088/0957-4484/23/41/415704
关键词:
摘要: SiC nanowires (NWs) are commonly prepared in a Si–C–N system, but its formation mechanism is not fully understood. High resolution transmission electron microscopy and energy loss spectroscopy observation recorded the growth process of how Si3N4 NWs were transformed into NWs, demonstrated validity an intermediate template directed NW via carbothermal reduction system. Based on this discovery, intermediate-template was proposed.
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