Method for making a three-dimensional integrated circuit structure

摘要: Vertically oriented semiconductor devices may be added to a separately fabricated substrate that includes electrical and/or interconnect. The plurality of vertically are physically separated from each other, and not disposed within the same body, or substrate. as thin layer including several doped regions which, subsequent attachment, etched produce individual stack structures. Alternatively, prior attachment structures form basis for diodes, capacitors, n-MOSFETs, p-MOSFETs, bipolar transistors, floating gate transistors. Ferroelectric memory devices, Ferromagnetic chalcogenide phase change formed in stackable add-on use conjunction with Stackable layers include interconnect lines.