作者: J. Hlinka
DOI: 10.1080/00150190701260694
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摘要: Phenomenological theory of dissipation-limited motion ferroelectric domain walls under external bias field is applied to the case 90-degree wall in a defect-free BaTiO3 crystal. Quantitative estimation for limiting mobility (μE∼ 5 × 10− 4 m2/Vs at room temperature) obtained framework Landau-Khalatnikov equation and generalized Ginzburg-Landau-Devonshire model, using model parameters estimated from results independent experiments.