作者: Shareen Shafique , Shuming Yang , Yiming Wang , Yonas Tesfaye Woldu , Biyao Cheng
DOI: 10.1016/J.SNA.2019.07.003
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摘要: Abstract This paper investigates the properties of urchin-like hollow spheres vanadium pentoxide (UHS V2O5) network device. The device exhibited high photocurrent μA with 102 rectification ratio under illumination due to formation a structure that reduced junction barrier and providing more electronic paths in our photodetector. photovoltaic characteristics near zero bias were also observed when irradiated by 450 nm 29.8 mW/cm2. calculated open circuit voltage short-circuit current 0.26 V 0.105 μA, respectively. key performing parameters responsivity specific detectivity fabricated (7.18-0.91) A/W (5.94 × 1011-7.5 1010) Jones, respectively −5 V an power from (3.3–29.8) mW/cm2. high-performance is attributed high-quality well-distributed UHS V2O5 has active sites large area facilitate oxygen adsorption desorption at surface.