作者: Tsutomu Ishi , Junichi Fujikata , Kikuo Makita , Toshio Baba , Keishi Ohashi
DOI: 10.1143/JJAP.44.L364
关键词:
摘要: Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated Si Schottky photodiode that consists of an 300 nm in diameter and antenna to generate carrier within efficiently. The shows increase photocurrent several tenfold compared without antenna. This result suggests photogeneration carriers semiconductor via resonance. Such nano-photodiode is potential high-speed signal detector because opto-electronic conversion process occurs scale.