Electronic excitation induced sputtering of insulating and semiconducting oxides by high energy heavy ions
作者： N. Matsunami , M. Sataka , A. Iwase , S. Okayasu
DOI: 10.1016/S0168-583X(02)02050-5
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摘要: Abstract We have measured the electronic sputtering yields of eight samples insulating and semiconductor oxides by high energy heavy ions for systematic investigation excitation effect on atomic displacement, applying a carbon-film collector method. found that yields, which include oxygen contribution, increase super-linearly with stopping power S e they are larger 30–2000 than calculated based elastic collision cascade. In plot at given versus band gap E g , upper limits suggested maximum follow 4 dependence.
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