Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD
作者： V.S. Waman , M.M. Kamble , S.S. Ghosh , R.R. Hawaldar , D.P. Amalnerkar
DOI: 10.1016/J.MATERRESBULL.2012.07.008
关键词:
摘要: Abstract We report influence of helium dilution silane in hot wire chemical vapor deposition for hydrogenated nano-crystalline silicon films. Structural properties these films have been investigated by using Raman spectroscopy, low angle x-ray diffraction, Fourier transform infra-red spectroscopy and non-contact atomic force microscopy. Optical characterization has performed UV–visible spectroscopy. It observed that contrast to conventional plasma enhanced deposition, the addition with an adverse effect on crystallinity material properties. Hydrogen content was found
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