作者: Yabuuchi Makoto , Maeda Noriaki , Shibata Ken , Tanaka Shinji , Sano Toshiaki
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摘要: A semiconductor storage device provided can increase a write margin and suppress of chip area. The includes plural memory cells arranged in matrix; bit-line pairs corresponding to each column the cells; driver circuit which transmits data pair selected according data; assist drives bit line on low potential side negative voltage level. first signal wiring; wiring control signal; second is coupled low-potential generates by driving circuit, based inter-wire coupling capacitance with wiring.