Reactive Ion Etching Techniques for Silicon Sidewall Angle Control in Microengineering

摘要: This paper describes reactive ion etching (RIE) techniques with silicon substrates for initial processing of semiconductor field emitter array cathodes vacuum microelectronics. A secondary focus is process research optical reflecting gratings opto- and micromechanical devices. These applications each require control the sidewall angle apex radius. In this paper, we describe micromachining trenches remainder angles varying from 15-60° resulting ridge radii as small 40 nm. fluorine-based chemistry (CF 4 /O 2 ) oblique incident beam (tilted substrates) overetching used. The use both deep UV-hardened photoresist aluminum RIE shadowamsks compared. Unannealed a shadowmask has advantage lower etch/sputtering rates higher temperature tolerance compared to in CF system. Etch environments pressure range 30-80 mTorr flow 20/2 sccm, RF power 100-200 W, etch duration 30 min are described