Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
作者： Allan Ward , Jason Patrick Henning
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摘要: An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The includes a carbide-based device high-field operation, an active region the device, edge passivation region, which includes, oxide layer on at least some of portions satisfying surface states and lowering interface density, non-stoichiometric nitride avoiding incorporation hydrogen reducing parasitic capacitance minimizing trapping, and, stoichiometric nonstoichiometric encapsulating the. layer.
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