Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials
作者： Heine Nygard Riise , Thomas Schumann , Alexander Azarov , Renè Hübner , Wolfgang Skorupa
DOI: 10.1063/1.4926661
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摘要: Shallow, Boron (B)-doped p+ emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The extend between 50 140 nm in depth below the surface, peak concentrations 9 × 1019 cm–3 3 × 1020 cm–3, exhibit sheet resistances 70 3000 Ω/□. An exceptionally large increase diffusion occurs for FLA energy densities exceeding ∼93 J/cm2 irrespective of 10 or 20 ms pulse duration. effect is attributed enhanced caused by Si interstitial injection following a thermally activated reaction diffusant film silicon wafer.
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