Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure
作者： Guoguang Wu , Guotong Du , Fubin Gao , Hui Wang , Chunsheng Shen
DOI: 10.1088/0022-3727/45/21/215102
关键词:
摘要: An n-InN nanodots/p-Si(1 1 1) heterojunction diode was fabricated by plasma-assisted molecular beam epitaxy. The device shows clear rectifying behaviour with a turn-on voltage of approximately 1.2 V at room temperature. near-infrared electroluminescence (EL) can be observed under forward bias, which covers wide wavelength range. In comparison the photoluminescence spectra, maximum EL spectra has blueshift is probably due to size quantization effect small-sized InN nanodots and their stronger contribution intensity. On other hand, there an obvious enhancement less dominant transitions on short side may arise from recombination injected holes extremely high-density surface electrons nanodots.
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