Quenching of Photoluminescence in Conjugates of Quantum Dots and Single-Walled Carbon Nanotube

摘要: Development of quantum dot (QD) based device components requires controlled integration QDs into different photonic and electronic materials. In this regard, introduction methods for regular arrangement investigation properties QD-based assemblies are important. the current work we report (1) conjugation CdSe-ZnS to sidewall-functionalized single-walled carbon nanotube (SWCNT) templates (2) effect SWCNT on photoluminescence (PL) QDs. We identified that PL intensity lifetime considerably reduced after SWCNT. The origin quenching was discussed in terms Forster resonance energy transfer (FRET). FRET involves nonradiative from a photoexcited QD (energy donor) nearby acceptor) ground state. This examined by varying density conjugating smaller bigger same estimated efficiency QD-SWCNT conjugates is independent type but inherent conjugates.