Method for etch fabrication of iridium-based electrode structures

摘要: A method of forming an iridium-based electrode structure on a substrate, from iridium-containing precursor thereof which is decomposed to deposit iridium the substrate. The material formed substrate in desired environment, e.g., oxidizing ambient environment may for example contain gas such as oxygen, ozone, air, or nitrogen oxide, alternatively reducing containing agent H 2 , CO NH 3 . deposited contacted with etching reagent halogen-based etch species (e.g., Cl Br F CCl 4 Si 6 SiCl NF C SF CF ) by exposing halogen light, laser radiation, plasma, ion beam, XeF sufficient time and under conditions form etched structure. then have dielectric ferroelectric thereon, fabrication thin film capacitor semiconductor devices DRAMs, FeRAMs, hybrid systems, smart cards communication systems.