Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system

作者: S. Ishida , Y. Arakawa , K. Sawano , Y. Shiraki , T. Machida

DOI: 10.1103/PHYSREVB.73.121304

关键词:

摘要: We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system quantum Hall regime. By selectively populating spin-resolved edge channels, we observe suppression scattering between two channels with spin-up and spin-down. In contrast, when Zeeman splitting levels is enlarged tilting magnetic field direction, spin orientations both relevant are switched to spin-down, inter-edge-channel strongly promoted. The evident dependence adiabatic an individual feature silicon-based systems, originating from weak spin-orbit interaction.

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