Mechanism of the improvement in microcrystalline silicon solar cells by hydrogen plasma treatment
作者： Jing Yan Li , Xiang Bo Zeng , Hao Li , Xiao Bing Xie , Ping Yang
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.773.118
关键词:
摘要: We explain the experimental improvement in long wavelength response by hydrogen plasma treatment (HPT) n/i interface. The absorption coefficient of intrinsic microcrystalline silicon (μc-Si) is decreased low energy region (0.8~1.0 eV) HPT, which indicates a lower defect density μc-Si layer deposited with HPT than its counterpart without HPT. Simulation one-dimensional device simulation program for Analysis Microelectronic and Photonic Structures (AMPS-1D) shows higher solar cell if smaller. Our results also disclose that less layer, recombination rate electric field is. Higher longer drift length will promote collection carriers generated photons wavelength. Thus we deduce absorber improved performance cells response.
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