Photoelectric study of β‐FeSi2 on silicon: Optical threshold as a function of temperature
作者： K. Lefki , P. Muret
DOI: 10.1063/1.354939
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摘要: Investigation of the photoelectric properties several metal/β‐FeSi2/Si heterostructures is presented. For thin silicide samples (200 A), photocurrent follows a Fowler’s law with threshold Φ1 lower than band gap Eg. thicker (2500 behavior different because optical absorption within can no longer be neglected: maximum observed instead at The variations Eg and temperature are compellingly similar show strong effect electron‐phonon coupling. We suggest that corresponds to transitions between trap localized near heterojunction conduction band.
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