Ultraviolet-A LED Based on Quantum-Disks-in-AlGaN-Nanowires—Optimization and Device Reliability
作者： Bilal Janjua , Davide Priante , Aditya Prabaswara , Lafi Alanazi , Chao Zhao
DOI: 10.1109/IPCON.2018.8527172
关键词:
摘要: Group-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications in solid-state lighting, spectroscopy, biomedical. However, the internal quantum efficiency, injection extraction efficiency need to be further improved. The focus of this paper encompasses investigations based structural optimization, device simulation, reliability. To optimize UVA (320–400 nm) structure, we utilize self-assembled Qdisks NWs with varying thickness study carrier separation active-region implement an improved p-contact-layer increase output power. By found 100× improvement direct recombination rate samples thicker ∼5 monolayers (MLs) compared sample ∼2 MLs-thick Qdisks. Moreover, graded top Mg-doped AlGaN layer conjunction thin GaN shows 10× power absorbing contact layer. A fitting ABC model revealed nonradiative centers active region after soft stress test. This aims shed light research efforts required furthering UV LED practical applications.
sci-hub.se 参考文章(42)
Nitride semiconductor devices : principles and simulation Wiley-VCH Verlag GmbH & Co. KGaA. ,(2007) , 10.1002/9783527610723
Mitsuo Fukuda, Reliability and degradation of semiconductor lasers and LEDs ,(1991)
Joachim Piprek, Optoelectronic devices : advanced simulation and analysis Optoelectronic Devices: Advanced Simulation and Analysis. pp. 238- ,(2005)
Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stölmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature Journal of Applied Physics. ,vol. 118, pp. 094504- ,(2015) , 10.1063/1.4929656
Hiroto Sekiguchi, Kei Kato, Jo Tanaka, Akihiko Kikuchi, Katsumi Kishino, Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy Physica Status Solidi (a). ,vol. 205, pp. 1067- 1069 ,(2008) , 10.1002/PSSA.200778733
Yuri Bilenko, Jinwei Yang, Michael Shur, Remis Gaska, Craig Moe, Gregory Garrett, Michael Wraback, Max Shatalov, Wenhong Sun, Alex Lunev, Xuhong Hu, Alex Dobrinsky, AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% Applied Physics Express. ,vol. 5, pp. 082101- ,(2012) , 10.1143/APEX.5.082101
Wei Guo, Meng Zhang, Animesh Banerjee, Pallab Bhattacharya, Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Letters. ,vol. 10, pp. 3355- 3359 ,(2010) , 10.1021/NL101027X
Wei Guo, Meng Zhang, Pallab Bhattacharya, Junseok Heo, Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. Nano Letters. ,vol. 11, pp. 1434- 1438 ,(2011) , 10.1021/NL103649D
Vincent Fellmann, Périne Jaffrennou, Diane Sam-Giao, Bruno Gayral, Katharina Lorenz, Eduardo Alves, Bruno Daudin, Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 50, pp. 031001- ,(2011) , 10.1143/JJAP.50.031001
Harumasa Yoshida, Yoji Yamashita, Masakazu Kuwabara, Hirofumi Kan, A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode Nature Photonics. ,vol. 2, pp. 551- 554 ,(2008) , 10.1038/NPHOTON.2008.135