A comparison of shallow implantation between B, BF/sub 2/ and B/sub 10/H/sub 14/ by molecular dynamics simulation

摘要: The creation of shallow junctions in the semiconductor industry is a crucial step for future devices. Conventional implanters have difficulties producing ion beams below 50 keV. Advanced silicon processing requires equivalent B energies 1 There are number potential ways obtaining these low energy beams. use molecular species has been employed several years and recently adopting de-acceleration stage become available. We look here at differences that might occur by different or using boron beam. difference between occurring because vast density impacting particle. will arrive with little but larger BF/sub 2/ B/sub 10/H/sub 14/ ions as much 10 times energy, all which deposited similar volume target. This can lead to loss from surface.