Transparent p-CuI/n-BaSnO3-δ heterojunctions with a high rectification ratio.
作者： Jeong Hyuk Lee , Woong-Jhae Lee , Tai Hoon Kim , Takhee Lee , Seunghun Hong
关键词:
摘要: Transparent p-CuI/n-BaSnO3−δ heterojunction diodes were successfully fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top an epitaxial BaSnO3–δ (0 0 grown pulsed laser deposition. Upon thickness being increased from 30 to 400 nm, hole carrier density was systematically reduced 6.0 × 1019 1.0 cm−3 and corresponding rectification ratio pn diode proportionally enhanced ~10 ~106. An energy band diagram exhibiting type-II alignment is proposed describe behavior diode. A shift built-in potential caused change in attributed thickness-dependent ratio. The best performing exhibited high current 6.75 105 at ±2 V ideality factor ~1.5.
harvard.edu
sci-hub.se 参考文章(33)
Donald A. Neamen, Semiconductor physics and devices basic principles ,(1991)
Min Zi, Juan Li, Zichao Zhang, Xuesong Wang, Jun Han, Xiaopeng Yang, Zhiwen Qiu, Haibo Gong, Ziwu Ji, Bingqiang Cao, Effect of deposition temperature on transparent conductive properties of γ‐CuI film prepared by vacuum thermal evaporation Physica Status Solidi (a). ,vol. 212, pp. 1466- 1470 ,(2015) , 10.1002/PSSA.201532015
B. C. Luo, J. Wang, X. S. Cao, K. X. Jin, Rectifying behavior and photoinduced characteristic in La‐doped BaSnO3/p‐Si heterojunctions Physica Status Solidi (a). ,vol. 211, pp. 705- 708 ,(2014) , 10.1002/PSSA.201330363
Woong-Jhae Lee, Hyung Joon Kim, Egon Sohn, Hoon Min Kim, Tai Hoon Kim, Kookrin Char, Jin Hyeok Kim, Kee Hoon Kim, Oxygen diffusion process in a Ba0.96La0.04SnO3 thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements Physica Status Solidi (a). ,vol. 212, pp. 1487- 1493 ,(2015) , 10.1002/PSSA.201532032
Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char, All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 APL Materials. ,vol. 3, pp. 036101- ,(2015) , 10.1063/1.4913587
Sayantan Das, Jea-Young Choi, TL Alford, None, P3HT: PC61BM based solar cells employing solution processed copper iodide as the hole transport layer Solar Energy Materials and Solar Cells. ,vol. 133, pp. 255- 259 ,(2015) , 10.1016/J.SOLMAT.2014.11.004
Rudolf C. Hoffmann, Mareiki Kaloumenos, Silvio Heinschke, Emre Erdem, Peter Jakes, Rüdiger-A. Eichel, Jörg J. Schneider, Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition Journal of Materials Chemistry C. ,vol. 1, pp. 2577- 2584 ,(2013) , 10.1039/C3TC00841J
Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann, Transparent p-CuI/n-ZnO heterojunction diodes Applied Physics Letters. ,vol. 102, pp. 092109- ,(2013) , 10.1063/1.4794532
S. Calnan, A.N. Tiwari, High mobility transparent conducting oxides for thin film solar cells Thin Solid Films. ,vol. 518, pp. 1839- 1849 ,(2010) , 10.1016/J.TSF.2009.09.044
Dagui Chen, Yongjing Wang, Zhang Lin, Jiakui Huang, XianZhi Chen, Danmei Pan, Feng Huang, Growth Strategy and Physical Properties of the High Mobility P-Type CuI Crystal Crystal Growth & Design. ,vol. 10, pp. 2057- 2060 ,(2010) , 10.1021/CG100270D