Contact Damage in Single‐Crystalline Silicon Investigated by Cross‐Sectional Transmission Electron Microscopy

摘要: Cross-sectional transmission electron microscopy (TEM) is demonstrated as a powerful tool for investigating subsurface damage in the micrometer and submicrometer ranges brittle materials, applications to wide variety of contact silicon are discussed illustrated with TEM images. Regions plasticity different types cracking identified characterized various situations: indentation, scribing, solid-particle impacts, polishing/grinding. Most single-point situations result similar silicon, although transitions between mechanisms occur load levels. Normally, crack geometry governed by principal stress directions only weakly influenced lattice orientation. Grinding metal-bonded abrasives results fairly deep zones, but main mode material removal superficial lateral cracking. Polishing small-size free very zones mirror-like surface finish.