作者: Jürgen Gutowski , Hans-Georg Breunig , Tobias Voss
DOI: 10.1007/978-3-662-09115-9_6
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摘要: Optical properties of direct-gap semiconductors are, at least for moderate excitation densities and temperatures, strongly governed by excitonic processes, i.e., in the most simple case formation decay two-particle system exciton composed each one conduction-band electron valence-band hole bound their mutual Coulomb attraction. However, even unbound electrons holes bands experience correlation leading to so-called enhancement band-edge absorption exceeding square-root deduced from treatment optical single-particle approach which interaction excitations is neglected.