Zn drops at a Si surface measured by the refracted x‐ray fluorescence method

作者: Y. C. Sasaki , M. Kisimoto , S. Nagata , S. Yamaguchi , K. Hirokawa

DOI: 10.1063/1.347411

关键词:

摘要: Si and Zn are essentially mutually insoluble. We were able to detect drops at a surface by using the refracted x‐ray fluorescence method when wafer was implanted with ions 50 keV up doses of 1 × 1016 cm−2. The presence confirmed both measuring roughness Rutherford‐backscattering spectroscopy spectra.

参考文章(7)
K. Hirokawa, Y. C. Sasaki, Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs Applied Physics A. ,vol. 52, pp. 28- 32 ,(1991) , 10.1007/BF00323681
Yuji C. Sasaki, Kichinosuke Hirokawa, New nondestructive depth profile measurement by using a refracted x‐ray fluorescence method Applied Physics Letters. ,vol. 58, pp. 1384- 1386 ,(1991) , 10.1063/1.104315
Yuji Sasaki, Kichinosuke Hirokawa, Refraction effect of scattered X-ray fluorescence at surface Applied Physics A. ,vol. 50, pp. 397- 404 ,(1990) , 10.1007/BF00323597
Arthur Compton, X-rays and electrons ,(1926)
Emmett F. Kaelble, Handbook of X-rays ,(1967)
R. S. Nelson, J. Stephen G. Dearnaley J. H. Freeman, Ion Implantation ,(1973)