Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition
作者： Hadar Manis-Levy , Tsachi Livneh , Ido Zukerman , Moshe H. Mintz , Avi Raveh
DOI: 10.1088/1009-0630/16/10/09
关键词:
摘要: The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation amorphous hydrogenated carbon (a-C:H) films was studied silicon substrates with a low methane (CH4) concentration (2–10 vol.%) in CH4+Ar mixtures. substrate applied either by RF (13.56 MHz) LF (150 kHz) power supply. highest hardness values (~18–22 GPa) lower hydrogen content (~20 at.%) deposited at 10 vol.% CH4, achieved using bias. However, bias, under similar plasma generation and CH4 (50 W vol.%, respectively), displayed (~6–12 high (~40 at.%). structures analyzed Fourier Transform Infrared (FTIR) Raman scattering measurements provide an indication trans-polyacetylene structure formation. its excessive method is consistent higher bonded level hardness, as compared to film prepared method. It found that properties stronger than identical powered electrode PECVD (plasma enhanced chemical vapor deposition) system configuration.
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