Photocurrent of Undoped, n- and p-Type Si Nanowires Synthesized by Thermal Chemical Vapor Deposition

摘要: Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition is investigated in this study. For an undoped nanowire biased at 3 V, photocurrent excited the 633-nm wavelength light stronger intensity than that 325-nm light, photoresponses are rapid when switched on off. In contrast, for nanowires, not measurable, although one still detectable. And obtained doped slower, compared with nanowire. phenomena observed discussed paper.