All-inorganic quantum dot assisted enhanced charge extraction across the interfaces of bulk organo-halide perovskites for efficient and stable pin-hole free perovskite solar cells.
作者： Dibyendu Ghosh , Dhirendra K. Chaudhary , Md. Yusuf Ali , Kamlesh Kumar Chauhan , Sayan Prodhan
DOI: 10.1039/C9SC01183H
关键词:
摘要: In spite of achieving high power conversion efficiency (PCE), organo-halide perovskites suffer from long term stability issues. Especially the grain boundaries polycrystalline perovskite films are considered as giant trapping sites for photo-generated carriers and therefore play an important role in charge transportation dynamics. Surface engineering via boundary modification is most promising way to resolve this issue. A unique antisolvent-cum-quantum dot (QD) assisted approach has been employed creating monolithically grained, pin-hole free films, wherein choice all-inorganic CsPbBrxI3−x (x = 1–2) QDs significant. The filling by facilitates formation compact with 1–2 μm grains compared 300–500 nm unmodified films. solar cells fabricated CsPbBr1.5I1.5 QD yield a PCE ∼16.5% ∼13% devices. X-ray photoelectron spectral analyses reveal that sharing electrons between PbI6− framework bulk Br− ions transfer process while femtosecond transient absorption spectroscopy (fs-TAS) suggests quicker trap enhanced carrier recombination lifetime. Considerable ambient up ∼720 h <20% degradation firmly establishes strategic
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