Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending
作者： Ming-Wei Chen , Jose Ramon Duran Retamal , Cheng-Ying Chen , Jr-Hau He
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摘要: The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. pronounced leads to enhancement-mode field-effect-transistor in dark and accounts for slow after switching off illumination. recovery of photocurrent is found be strongly related intensity UV light diameter NWs, indicating that dominated by band bending (SBB). A model based SBB NWs proposed interpret experimental results.
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