Back contacts materials used in thin film CdTe solar cells—A review

作者: Dan Lamb , Stuart James Curzon Irvine , Ralph Stephen Hall

DOI: 10.1002/ESE3.843

关键词:

摘要: … Bismuth telluride is a narrow gap semiconductor, with rhombohedral crystal symmetry, that can be doped n-type or p-type. Bismuth is … the reaction of methylammonium iodide (MAI) with …

参考文章(220)
Dominik K. Koll, Ahmad H. Taha, Dean M. Giolando, Photochemical “Self-healing” pyrrole based treatment of CdS/CdTe photovoltaics Solar Energy Materials and Solar Cells. ,vol. 95, pp. 1716- 1719 ,(2011) , 10.1016/J.SOLMAT.2011.01.038
A. Zozime, C. Vermeulin, Properties of sputtered mercury telluride contacts on p-type cadmium telluride Revue de Physique Appliquée. ,vol. 23, pp. 1825- 1835 ,(1988) , 10.1051/RPHYSAP:0198800230110182500
X. Wu, J. Zhou, A. Duda, Y. Yan, G. Teeter, S. Asher, W.K. Metzger, S. Demtsu, Su-Huai. Wei, R. Noufi, Phase control of CuxTe film and its effects on CdS/CdTe solar cell Thin Solid Films. ,vol. 515, pp. 5798- 5803 ,(2007) , 10.1016/J.TSF.2006.12.151
Wei Xia, Hao Lin, Hsiang Ning Wu, Ching W. Tang, Irfan Irfan, Chenggong Wang, Yongli Gao, Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells Solar Energy Materials and Solar Cells. ,vol. 128, pp. 411- 420 ,(2014) , 10.1016/J.SOLMAT.2014.06.010
Songbai Hu, Zhe Zhu, Wei Li, Lianghuan Feng, Lili Wu, Jingquan Zhang, Jingjing Gao, Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer AIP Advances. ,vol. 1, pp. 042152- ,(2011) , 10.1063/1.3663613
E Janik, R Triboulet, Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride Journal of Physics D. ,vol. 16, pp. 2333- 2340 ,(1983) , 10.1088/0022-3727/16/12/011
J.P. Ponpon, A review of ohmic and rectifying contacts on cadmium telluride Solid-state Electronics. ,vol. 28, pp. 689- 706 ,(1985) , 10.1016/0038-1101(85)90019-X
Chris G Van de Walle, D.B Laks, Nitrogen doping in ZnSe and ZnTe Solid State Communications. ,vol. 93, pp. 447- 450 ,(1995) , 10.1016/0038-1098(94)00815-9
R. H. Williams, M. H. Patterson, Fermi level pinning at metal‐CdTe interfaces Applied Physics Letters. ,vol. 40, pp. 484- 486 ,(1982) , 10.1063/1.93151
O Panchuk, A Savitskiy, P Fochuk, Ye Nykonyuk, O Parfenyuk, L Shcherbak, M Ilashchuk, L Yatsunyk, P Feychuk, None, IV group dopant compensation effect in CdTe Journal of Crystal Growth. ,vol. 197, pp. 607- 611 ,(1999) , 10.1016/S0022-0248(98)00798-2