Temperature-compensated ring oscillator circuit formed on a semiconductor substrate

摘要: An improved ring oscillator is disclosed which can be formed in a semiconductor substrate. The includes inverters cascaded ring-like manner, and diffused resistor R1 having positive temperature coefficient polysilicon R2 negative for determining bias currents supplied to the inverters. oscillation frequency tends decrease with rise of ambient based on characteristic circuit itself; however, change compensated by R2. Therefore, reference clock signal generating an not affected