DEVICE FOR MEASURING A RADIOELECTRIC DOSE ON A SURFACE, IN PARTICULAR FOR MEASURING THE RADIOLOGICAL DOSE FOR A PATIENT DURING A RADIOLOGY OPERATION
作者： Loyez Christophe , Guerin Laura , Maaloul Fouad
DOI:
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摘要: The present invention relates to a device for measuring radioelectric dose on surface, in particular the radiological patient during radiology operation. According invention, includes: matrix with sensors equipped transparent radio antennas, capable of creating an electric signal corresponding electromagnetic radiation received; meansfor flows emitted by each sensor; and means processing flow measurements calculating accumulation doses received predetermined zones matrix.
lens.org 参考文章(7)
Stefan Thalhammer, Markus Hofstetter, Martin Stutzmann, John Howgate, Radiation detector and measurement device for detecting x-ray radiation ,(2012)
Bruce E. Barnes, William A. Blair, David A. Poirier, Method and apparatus to detect transponder tagged objects and to communicate with medical telemetry devices, for example during medical procedures ,(2009)
Aaron Judy Couture, Richard Larry Anderton, Method and system for integrated patient table digital x-ray dosimeter ,(2014)
John Carroll, Phillip M. Lehman, Gregory Glenwood Mann, Robert D. Black, Steven R. Widener, Disposable single-use external dosimeters for detecting radiation in fluoroscopy and other medical procedures/therapies ,(2004)
Denis Staub, Luc Mertz, Josian Cailleret, Jean Louis Guyonnet, Real-time radiation dose measurement during medical radiology involves using optical fiber network to generate optical signal when exposed to radiation, and measuring the optical signal outside inspected region, to determine radiation dose ,(2003)
Arita Kazuhiro, RADIOLOGICAL IMAGING SYSTEM ,(2010)
Sarrabayrouse Gerard, Canals Anna, Laprie Anne, Lavielle Denis, Hangard Gregory, Colin Valerie, Chatry Christian, Dosimeter for use during radiotherapy treatment session, has printed circuit board wrapped in envelope forming material, and MOSFET placed on printed circuit board, where gate oxide thickness of MOSFET ranges between specific micrometers ,(2009)