Effect of modes of glass-formation on structure of intrinsic or photon induced defects centered on III, IV or V cations in oxide glasses

摘要: Abstract Electronic and geometrical structure of intrinsic or photon-induced defects centered on a cation belonging to the III, IV V group in oxide glasses prepared under different conditions are reviewed by adding new data Ga, Tl, Ge, Sn, Pb, N, P As related centers. The effect modes glass-formation, redox presence impurities structures is examined. Some ESR centers identified detecting analyzing hyperfine structures. These include Ga electron having proposed coordination number depending precursors; (3) Ge center similar (1); Tl centers, model which shown be tin hole with applications method problems glass technology shown; these alkali transport radiation damage an optical fiber.