作者: Md. Shahzad Khan , Venkatesh Ranjan , Anurag Srivastava
DOI: 10.1109/INIS.2015.61
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摘要: A detailed discussion has been made for NH3 affinity towards arsenene sheet. First principle calculations suggest that get adsorbed on pristine with weak binding. Doping Germanium and Selenium respectively decreased increased energy bnad gap. NBO analysis arsenic (As) valance-p orbital have active participations in binding Ge Se. doping results stronger of to sheet depend upon level theory used DFT calculations. Molecular diagram picture reveals lone pair electron dispersion from