Ultrafast and direct imprint of nanostructures in silicon

摘要: The fabrication of micrometre-and nanometre-scale devices in silicon typically involves lithography and etching. These processes are costly and tend to be either limited in their resolution or slow in their throughput. Recent work has demonstrated the possibility of patterning substrates on the nanometre scale by 'imprinting', or directed self-assembly, although an etching step is still required to generate the final structures. We have devised and here demonstrate a rapid technique for patterning nanostructures in silicon that does …